2SB1412 View Datasheet(PDF) - Secos Corporation.
Part Name
Description
Manufacturer
2SB1412 Datasheet PDF : 3 Pages
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Elektroni sche Bauelemente
2SB1412
PNP Silicon
Low Frequency Transistor
-5
lC/lB=50
-2
-1
-0.5
−25°C
25°C
Ta=100°C
-0.2
-0.1
-0.05
-0.02
-0.01
-2m -5m-0.01-0.02 -0.05-0.1 -0.2 -0.5 -1 -2 -5 -10
COLLECTOR CURRENT : IC (A)
Fig.10 Collector-emitter saturation
voltage vs. collector current (V)
1 000
500
Ta=25°C
VCE=−6V
200
100
50
20
10
5
2
1
1 2 5 10 20 50 100 200 5001000
EMITTER CURRENT : IE (mA)
Fig.11 Gain bandwidth product
vs. emitter current
1000
500
200
100
50
Ta=25°C
f=1MHz
IE=0A
20
10
-0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.12 Collector output capacitance
vs. collector-base voltage
1000
500
200
100
50
Ta=25°C
f=1MHz
IC=0A
20
10
-0.1 -0.2 -0.5 -1 -2
-5 -10
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.13 Emitter input capacitance
vs. emitter-base voltage
100
50
20
10
5
2
1
DC
500m
200m
100m
50m
20m
10m
0.2 0.5 1 2
Ta=25°C
∗Single
nonrepetitive
pulse
5 10 20 50 100 200 500
COLLECTOR TO EMITTER VOLTAGE : −VCE (V)
Fig.14 Safe operation area
(2SB1412)
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 3 of 3
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