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B1412 View Datasheet(PDF) - Secos Corporation.

Part NameB1412 Secos
Secos Corporation. Secos
DescriptionPNP Silicon Low Frequency Transistor
B1412 Datasheet PDF : 3 Pages
1 2 3
Elektronische Bauelemente
2SB1412
PNP Silicon
Low Frequency Transistor
RoHS Compliant Product
Features
1)Low VCE(sat).
2)Excellent DC current gain characteristics
3)Complements the 2SD2118
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Limits
30
20
6
5
10
Unit
V
V
V
A(DC)
A(Pulse) 1
2SB1386
Collector power
dissipation
2SB1412
PC
0.5
W
2
W 2
1
W
10
W(TC=25°C)
2SB1326
1
W 3
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55~+150
°C
1 Single pulse, Pw=10ms
2 When mounted on a 40×40×0.7 mm ceramic board.
3 Printed circuit board glass epoxy board 1.6 mm thick with copper plating 100mm2 or larger.
6.6 0.2
0.2
5.3 0.1
D-Pack
2.3 0.1
0.5 0.1
0.8 0.1
0.3
0.7 0.1
2.3
0.6 0.1
1.2 0.3
1.5Max
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO 30
Collector-emitter breakdown voltage BVCEO 20
Emitter-base breakdown voltage
BVEBO 6
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage VCE(sat)
DC current
transfer ratio
2SB1386,2SB1412
hFE
2SB1326
82
120
Transition frequency
fT
Output capacitance
Measured using pulse current.
Cob
Typ.
120
60
Max.
0.5
0.5
1.0
390
390
Unit
V
V
V
µA
µA
V
MHz
pF
Conditions
IC=−50µA
IC=−1mA
IE=−50µA
VCB=−20V
VEB=−5V
IC/IB=−4A/0.1A
VCE=−2V, IC=−0.5A
VCE=−6V, IE=50mA, f=30MHz
VCB=−20V, IE=0A, f=1MHz
!Packaging specifications and hFE
Package
Code
Type
Basic ordering
hFE unit (pieces)
2SB1386 PQR
2SB1412 PQR
2SB1326 QR
T100
1000
Taping
TL
2500
TV2
2500
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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