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2SB1400 View Datasheet(PDF) - Inchange Semiconductor

Part Name2SB1400 Iscsemi
Inchange Semiconductor Iscsemi
DescriptionSilicon PNP Power Transistors


2SB1400 Datasheet PDF : 3 Pages
1 2 3
Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1400
DESCRIPTION
·With TO-220Fa package
·High DC current gain
·Low collector saturation voltage
·DARLINGTON
APPLICATIONS
·For use in low frequency power
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector -emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current
ICM
Collector current-peak
Ta=25
PC
Collector power dissipation
TC=25
Tj
Junction temperature
Tstg
Storage temperature
VALUE
-120
-120
-7
-6
-10
2
25
150
-55~150
UNIT
V
V
V
A
A
W
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Silicon PNP Power Transistors

DESCRIPTION
·With TO-220Fa package
·High DC current gain
·Low collector saturation voltage
·DARLINGTON

APPLICATIONS
·For use in low frequency power amplifier applications

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