2SB1386 View Datasheet(PDF) - Weitron Technology

Part Name

Description

Manufacturer

2SB1386

Epitaxial Planar Transistor

Weitron Technology 

2SB1386

-5

IC /IB =10

-2

-1

-0.5

-0.2

-0.1

-0.05

-0.02

Ta =100 C

25 C

25 C

-0.01

-2m -5m-0.01-0.02-0.05-0.1 -0.2 -0.5 -1 -2 -5 -10

COLLECTOR CURRENT : IC (A)

FIG.7 Collector-Emitter Saturation

Voltage vs. Collector Current

-5

IC /IB =40

-2

25 C

-1

25 C

-0.5

-0.2

-0.1

-0.05

Ta =100 C

-0.02

-0.01

-2m -5m-0.01-0.02-0.05-0.1-0.2 -0.5 -1 -2 -5 -10

COLLECTOR CURRENT : IC(A)

FIG.9 Collector-Emitter Saturation

Voltage vs. Collector Current

1000

500

Ta =25 C

VCE =6V

200

100

50

20

10

5

2

1

12

5 10 20 50 100 200 500 1000

EMITTER CURRENT : IE(mA)

FIG.11 Gain Bandwidth Product

vs. Emitter Current

WEITRON

http://www.weitron.com.tw

-5

IC /IB =30

-2

-1

Ta =100 C

-0.5

25 C

-0.2

-0.1

-0.05

25 C

-0.02

-0.01

-2m -5m-0.01-0.02-0.05-0.1 -0.2 -0.5 -1 -2 -5 -10

COLLECTOR CURRENT : IC (A)

FIG.8 Collector-Emitter Saturation

Voltage vs. Collector Current

-5 IC /IB =50

-2

-1

-0.5

25 C

25 C

Ta =100 C

-0.2

-0.1

-0.05

-0.02

-0.01

-2m -5m-0.01-0.02-0.05-0.1-0.2 -0.5 -1 -2 -5 -10

COLLECTOR CURRENT : IC (A)

FIG.10 Collector-Emitter Saturation

Voltage vs. Collector Current

1000

500

200

100

50

Ta =25 C

f=1MHz

I E=0A

20

10

-0.1 -0.2 -0.5 -1 -2

-5 -10 -20 -50

COLLECTOR TO BASE VOLTAGE : VCB(V)

FIG.12 Collector Output Capacitance

vs. Collector-Base Voltage

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