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2SB1386 View Datasheet(PDF) - Weitron Technology

Part Name2SB1386 Weitron
Weitron Technology Weitron
DescriptionEpitaxial Planar Transistor
2SB1386 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Epitaxial Planar Transistor
PNP Silicon
MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
THERMAL CHARACTERISTICS
Characteristics
Total Device Dissipation FR-5 Board(1)
TA =25 C
Derate above 25 C
Thermal Resistance, Junction Ambient
Junction and Storage, Temperature
Device Marking
2SB1386=
Symbol
PD
R θJA
TJ, Tstg
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage(IC =-1 mAdc, IB=0)
Collector-Base Breakdown Voltage(IC =-50 uAdc, IE=0)
Emitter-Base Breakdown Voltage(IE =-50 uAdc, IC =0)
Collector Cufoff Current(VCB=-20Vdc, IE=0)
Emitter Cufoff Current(VEB =-5Vdc, IC=0)
1. FR-5=1.0 I I0.75I I0.062 in
2SB1386
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT-23
Value
-20
-30
-6.0
Value
150
0.5
833
-55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/ C
C/W
C
Symbol
Min Max
Unit
V(BR)CEO
-20
-
Vdc
V(BR)CBO
-30
-
Vdc
V(BR)EBO
-6.0
-
Vdc
ICBO
IEBO
-
-0.5
uAdc
-
-0.5
uAdc
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