2SB1386L-Q-AB3-R View Datasheet(PDF) - Unisonic Technologies

Part Name

Description

Manufacturer

2SB1386L-Q-AB3-R

LOW FREQUENCY PNP TRANSISTOR

Unisonic Technologies 

2SB1386

PNP SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-30

V

Collector-Emitter Voltage

VCEO

-20

V

Emitter-Base Voltage

VEBO

-6

V

Collector Current (DC)

IC(DC)

-5

A

Collector Current (Pulse)(Note1)

IC(PULSE)

-10

A

Collector Power Dissipation

Junction Temperature

Storage Temperature

Note 1. Single pulse, Pw=10ms

PC

0.5

W

TJ

150

℃

TSTG

-55 ~ +150

℃

2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified)

PARAMETER

Collector Base Breakdown Voltage

Collector Emitter Breakdown Voltage

Emitter Base Breakdown Voltage

Collector-Emitter Saturation Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Transition Frequency

Output Capacitance

SYMBOL

TEST CONDITIONS

BVCBO IC= -50μA

BVCEO IC= -1mA

BVEBO IE= -50μA

VCE(SAT) IC/IB= -4A/-0.1A

ICBO VCB= -20V

IEBO VEB= -5V

hFE VCE= -2V, IC= -0.5A

fT

VCE= -6V, IE= 50mA, f=30MHz

Cob VCB= -20V, IE= 0A, f=1MHz

„ CLASSIFICATION OF hFE

RANK

RANGE

P

82-180

Q

120-270

MIN TYP MAX UNIT

-30

V

-20

V

-6

V

-1.0 V

-0.5 μA

-0.5 μA

82

390

120

MHz

60

pF

R

180-390

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 5

QW-R208-019,C

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