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2SB1386-R-AB3-B-R-2005 View Datasheet(PDF) - Unisonic Technologies

Part Name2SB1386-R-AB3-B-R(2005) UTC
Unisonic Technologies UTC
DescriptionLOW FREQUENCY PNP TRANSISTOR


2SB1386-R-AB3-B-R Datasheet PDF : 5 Pages
1 2 3 4 5
2SB1386
„ TYPICAL CHARACTERICS(Cont.)
Collector-Emitter Saturation Voltage vs.
Collector Current (2)
-5
Ic/IB=10
-2
-1
-0.5
-0.2
-0.1
Ta=100
-0.05
Ta=25
-0.02
Ta= -25
-0.01
-2m -5m -0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10
Collector Current, Ic(A)
Collector-Emitter Saturation Voltage vs.
Collector Current (IV)
-5
Ic/IB=40
-2
Ta= -25
-1
Ta=25
-0.5
-0.2
-0.1
-0.05
Ta=100
-0.02
-0.01
-2m -5m -0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10
Collector Current, Ic(A)
Transetion Frequency vs. Emitter Current
1000
500 Ta=25
VcE= -6V
200
100
50
20
10
5
2
1
12
5 10 20 50 100200 500 1000
Emitter Current, IE(mA)
PNP SILICON TRANSISTOR
Collector-Emitter Saturation Voltage vs.
Collector Current (3)
-5
Ic/IB=30
-2
-1
Ta=100
-0.5
Ta=25
-0.2
-0.1
-0.05
-0.02
-0.01
-2m
Ta= -25
-5m-0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10
Collector Current, Ic(A)
Collector-Emitter Saturation Voltage vs.
Collector Current (V)
-5
Ic/IB=50
Ta= -25
-2
Ta=25
-1
Ta=100
-0.5
-0.2
-0.1
-0.05
-0.02
-0.01
-2m
-5m-0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10
Collector Current, Ic(A)
1000
500
Collector Output Capacitance vs.
Collector-Base Voltage
Ta=25
f =1MHz
IE=0A
200
100
50
20
10
-0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50
Collector to Base Voltage, VCB(V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R208-019,B
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■ FEATURES
* Excellent DC current gain characteristics
* Low VCE(SAT)
   VCE(SAT)= -0.35V (Typ)
   (IC/IB = -4A/-0.1A)

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