Integrated circuits, Transistor, Semiconductors Free Datasheet Search and Download Site


2SB1386L-Q-AB3-E-R-2005 View Datasheet(PDF) - Unisonic Technologies

Part Name2SB1386L-Q-AB3-E-R(2005) UTC
Unisonic Technologies UTC
DescriptionLOW FREQUENCY PNP TRANSISTOR
2SB1386L-Q-AB3-E-R Datasheet PDF : 5 Pages
1 2 3 4 5
2SB1386
PNP SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-30
V
Collector-Emitter Voltage
VCEO
-20
V
Collector-Emitter Voltage
VEBO
-6
V
Collector Current (DC)
IC(DC)
-5
A
Collector Current (Pulse)(Note1)
IC(PULSE)
-10
A
Collector Power Dissipation
Junction Temperature
Storage Temperature
Note 1. Single pulse, Pw=10ms
PC
0.5
W
TJ
150
TSTG
-55 ~ +150
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified)
PARAMETER
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Transition Frequency
Output Capacitance
SYMBOL
TEST CONDITIONS
BVCBO IC= -50μA
BVCEO IC= -1mA
BVEBO IE= -50μA
VCE(SAT) IC/IB= -4A/-0.1A
ICBO VCB= -20V
IEBO VEB= -5V
hFE VCE= -2V, IC= -0.5A
fT
VCE= -6V, IE= 50mA, f=30MHz
Cob VCB= -20V, IE= 0A, f=1MHz
„ CLASSIFICATION OF hFE
RANK
RANGE
P
82-180
Q
120-270
MIN TYP MAX UNIT
-30
V
-20
V
-6
V
-1.0 V
-0.5 μA
-0.5 μA
82
390
120
MHz
60
pF
R
180-390
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R208-019,B
Direct download click here
HOME '2SB1386L-Q-AB3-E-R' Search

■ FEATURES
* Excellent DC current gain characteristics
* Low VCE(SAT)
   VCE(SAT)= -0.35V (Typ)
   (IC/IB = -4A/-0.1A)

Share Link : 
한국어     日本語     русский     简体中文     español
@ 2015 - 2018  [ Home  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]