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Part Name  

B1261-Z View Datasheet(PDF) - TY Semiconductor

Part NameB1261-Z Twtysemi
TY Semiconductor Twtysemi
DescriptionPNP SILICON EPITAXIAL TRANSISTOR MP-3
B1261-Z Datasheet PDF : 2 Pages
1 2
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base saturation voltage *
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Fall time
* Pulsed: PW 350 ìs, duty cycle 2%
Product specification
2SB1261-Z
Symbol
Testconditons
ICBO VCB = -60 V, IE = 0
IEBO VEB = -7.0 V, IC = 0
VCE = -2.0 V, IC = -0.6A
hFE
VCE = -2.0 V, IC = -2A
VCE(sat) IC = -1.5A, IB = -0.15A
VBE(sat) IC = -1.5A, IB = -0.15A
fT VCE = -5.0 V, IE = 1.5A
Cob VCB = -10 V, IE = 0 , f = 1.0 MHz
ton
IC = -1.0 A,IB1 = -IB2 = -0.1 A, VCC = -
tstg 10 V, RL=10Ù
tf
Min Typ Max Unit
-10 ìA
-10 ìA
100
400
50
-0.2 -0.3 V
-0.94 -1.2 V
50
MHz
40
pF
0.15 0.5 ìs
0.5 2.0 ìs
0.1 0.5 ìs
hFE Classification
Rank
hFE
M
100 200
L
160 320
K
200 400
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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