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2SB1261-Z View Datasheet(PDF) - Renesas Electronics

Part Name2SB1261-Z Renesas
Renesas Electronics Renesas
DescriptionPNP SILICON EPITAXIAL TRANSISTOR
2SB1261-Z Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
DATA SHEET
SILICON POWER TRANSISTOR
2SB1261-Z
PNP SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SB1261-Z is designed for Audio Frequency Amplifier and
Switching, especially in Hybrid Integrated Circuits.
FEATURES
• High hFE hFE = 100 to 400
• Low VCE(sat) VCE(sat) 0.3 V
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
60
V
Emitter to Base Voltage
VEBO
7.0
V
Collector Current (DC)
IC(DC)
3.0
A
Collector Current (pulse) Note 1
IC(pulse)
5.0
A
Base Current (DC)
IB(DC)
0.5
A
Total Power Dissipation (TA = 25°C) Note 2
PT1
2.0
W
Total Power Dissipation (TC = 25°C)
PT2
10
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
55 to +150 °C
Notes 1. PW 10 ms, Duty Cycle 50%
2. When mounted on ceramic substrate of 7.5 cm2 × 0.7 mm
PACKAGE DRAWING (Unit: mm)
6.5 ±0.2
5.0 ±0.2
4.4 ±0.2
4
Note
2.3 ±0.2
0.5 ±0.1
Note
123
2.3 ±0.3
0.5 ±0.1
2.3 ±0.3
0.5 ±0.1
0.15 ±0.15
TO-252 (MP-3Z)
1. Base
2. Collector
3. Emitter
4. Collector Fin
Note The depth of notch at the top of the fin is
from 0 to 0.2 mm.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18262EJ4V0DS00 (4th edition)
Date Published December 2007 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
1986, 2006
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