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2SB1218AR View Datasheet(PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

Part Name2SB1218AR HTSEMI
Shenzhen Jin Yu Semiconductor Co., Ltd.  HTSEMI
DescriptionTRANSISTOR(PNP)


2SB1218AR Datasheet PDF : 1 Pages
1
2SB1 21 8 A
TRANSISTOR(PNP)
FEATURES
High DC Current Gain
Complementary to 2SD1819A
APPLICATIONS
General Purpose Amplification
SOT323
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-45
VCEO Collector-Emitter Voltage
-45
VEBO Emitter-Base Voltage
-7
IC
Collector Current
-100
PC
Collector Power Dissipation
150
RΘJA Thermal Resistance From Junction To Ambient
833
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55+150
Unit
V
V
V
mA
mW
/W
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
fT
Cob
Test conditions
IC=-10µA, IE=0
IC=-2mA, IB=0
IE=-10µA, IC=0
VCB=-20V, IE=0
VCE=-10V, IB=0
VEB=-5V, IC=0
VCE=-10V, IC=-2mA
IC=-100mA, IB=-10mA
VCE=-10V,IE=1mA ,f=200MHz
VCB=-10V, IE=0, f=1MHz
Min
Typ
-45
-45
-7
160
80
2.7
CLASSIFICATION OF hFE
RANK
RANGE
MARKING
Q
160260
BQ1
R
210340
BR1
S
290460
BS1
Max
-100
-100
-100
460
-0.5
Unit
V
V
V
nA
µA
nA
V
MHz
pF
1 
JinYu
semiconductor
www.htsemi.com
Date:2011/05
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FEATURES
• High DC Current Gain
• Complementary to 2SD1819A

APPLICATIONS
• General Purpose Amplification

 

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