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2SA1020-O-T9N-B View Datasheet(PDF) -

Part Name
Description
Manufacturer
2SA1020-O-T9N-B
 
2SA1020-O-T9N-B Datasheet PDF : 0 Pages
2SA1020
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
Ic
-2
A
Collector Power Dissipation
TO-92NL
900
mW
SOT-89
PC
500
mW
Junction Temperature
Storage Temperature
TJ
150
°C
TSTG
-55 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector to Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Turn-on Time
Storage Time
Switching Time
Fall Time
SYMBOL
BVCEO
ICBO
IEBO
hFE1
hFE2
VCE(SAT)
VBE(SAT)
fT
Cob
tON
tSTG
TEST CONDITIONS
Ic=-10mA, IB=0
VCB=-50V, IE=0
VEB=-5V, IC=0
VCE=-2V, IC=-0.5A
VCE=-2V, IC=-1.5A
Ic=-1A, IB=-0.05A
Ic=-1A, IB=-0.05A
VCE=-2V, Ic=-0.5A
VCB=-10V, IE=0, f=1MHz
tF
MIN TYP MAX UNIT
-50
V
-1.0 µA
-1.0 µA
70
240
40
-0.5 V
-1.2 V
100
MHz
40
pF
0.1
µs
1.0
µs
0.1
µs
CLASSIFICATION OF hFE1
RANK
RANGE
O
70 - 140
Y
120 - 240
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R211-007,B
 

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