2PD1820A View Datasheet(PDF) - Philips Electronics

Part Name

Description

Manufacturer

2PD1820A

NPN general purpose transistor

Philips Electronics 

Philips Semiconductors

NPN general purpose transistor

Product specification

2PD1820A

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-a

thermal resistance from junction to ambient

Note

1. Transistor mounted on an FR4 printed-circuit board.

CONDITIONS

note 1

VALUE

625

UNIT

K/W

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

ICBO

IEBO

hFE

hFE

VCEsat

Cc

fT

collector cut-off current

emitter cut-off current

DC current gain

2PD1820AQ

2PD1820AR

2PD1820AS

DC current gain

collector-emitter saturation voltage

collector capacitance

transition frequency

IE = 0; VCB = 20 V

−

IE = 0; VCB = 20 V; Tj = 150 °C

−

IC = 0; VEB = 4 V

−

IC = 150 mA; VCE = 10 V; note 1

85

120

170

IC = 500 mA; VCE = 10 V; note 1

40

IC = 300 mA; IB = 30 mA; note 1

−

IE = ie = 0; VCB = 10 V; f = 1 MHz

−

IC = 50 mA; VCE = 10 V; f = 100 MHz; 150

note 1

MAX.

10

5

10

UNIT

nA

µA

nA

170

240

340

−

600

mV

15

pF

−

MHz

Note

1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

1999 Apr 12

3

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