DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

2PB1219A View Datasheet(PDF) - TY Semiconductor

Part Name
Description
Manufacturer
2PB1219A
Twtysemi
TY Semiconductor Twtysemi
2PB1219A Datasheet PDF : 2 Pages
1 2
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
2PB1219AQ
2PB1219AR
2PB1219AS
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector capacitance
Transition frequency
2PB1219AQ
2PB1219AR
2PB1219AS
* Pulse test: tp 300 ìs; ä 0.02.
Product specification
2PB1219A
Symbol
Testconditons
ICBO IE = 0; VCB = -20 V
IE = 0; VCB = -20 V; Tj = 150
IEBO IC = 0; VEB = -4 V
Min Typ Max Unit
-100 nA
-5 ìA
-100 nA
hFE IC = -150 mA; VCE = -10 V; *
VCE(sat) IC = -300 mA; IB = -30 mA; *
VBE(sat) IC = -300 mA; IB = -30 mA; *
Cc IE = ie = 0; VCB = -10 V; f = 1 MHz
85 170
120 240
170 340
-600 mV
-1.5 V
15 pF
fT IC = 50 mA; VCE = -10 V;f = 100 MHz;* 100
120
140
MHz
hFE Classification
TYPE
Marking
2PB1219AQ
DQ
2PB1219AR 2PB1219AS
DR
DS
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
2 of 2
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]