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2PA1576S View Datasheet(PDF) - Philips Electronics

Part Name
Description
Manufacturer
2PA1576S
Philips
Philips Electronics Philips
2PA1576S Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Philips Semiconductors
PNP general purpose transistor
Product specification
2PA1576
FEATURES
Low current (max. 100 mA)
Low voltage (max. 40 V)
Low collector capacitance (typ. 2.5 pF).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SC-70 (SOT323) plastic package.
NPN complement: 2PC4081.
MARKING
TYPE NUMBER
2PA1576Q
2PA1576R
2PA1576S
MARKING CODE (1)
FQ
FR
FS
Note
1. = -: Made in Hong Kong.
= t: Made in Malaysia.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
handbook, halfpage
3
3
1
2
1
Top view
2
MAM048
Fig.1 Simplified outline (SC-70; SOT323)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
open emitter
collector-emitter voltage
open base
emitter-base voltage
open collector
collector current (DC)
peak collector current
peak base current
total power dissipation
Tamb 25 °C; note 1
storage temperature
junction temperature
operating ambient temperature
Note
1. Refer to SC-70 (SOT323) standard mounting conditions.
MIN.
65
65
MAX.
50
40
5
100
200
200
200
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 May 31
2
 

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