Philips Semiconductors
PNP general purpose transistor
Product specification
2PA1576
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 40 V)
• Low collector capacitance (typ. 2.5 pF).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SC-70 (SOT323) plastic package.
NPN complement: 2PC4081.
MARKING
TYPE NUMBER
2PA1576Q
2PA1576R
2PA1576S
MARKING CODE (1)
F∗Q
F∗R
F∗S
Note
1. ∗ = -: Made in Hong Kong.
∗ = t: Made in Malaysia.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
handbook, halfpage
3
3
1
2
1
Top view
2
MAM048
Fig.1 Simplified outline (SC-70; SOT323)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
open emitter
collector-emitter voltage
open base
emitter-base voltage
open collector
collector current (DC)
peak collector current
peak base current
total power dissipation
Tamb ≤ 25 °C; note 1
storage temperature
junction temperature
operating ambient temperature
Note
1. Refer to SC-70 (SOT323) standard mounting conditions.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
−50
−40
−5
−100
−200
−200
200
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 May 31
2