1SV215_ View Datasheet(PDF) - NXP Semiconductors.

Part Name

Description

Manufacturer

1SV215_

RF Manual 16th edition

NXP Semiconductors. 

1.4.5 802.11n DBDC and 802.11ac WLAN

Application diagram

antenna

low pass

lter

SPDT

switch

medium

power

ampli er

PActrl

Tx

APPLICATION

CHIPSET

bandpass LNA

lter

Rx

SPDT

bra502

Recommended products

Function

Product

Package

Medium

power

amplifier

MMIC

SOT89

Medium power

amplifier

SOT908

Function

LNA

Product

RF transistor

MMIC

SiGe:C

transistor

SiGe:C MMIC

Package

SOT343F

SOT883C

Type

BGA7024

BGA7027

BGA7124

BGA7127

Type

BFU730F

BFU760F

BFU730LX

Product highlight:

BFU760F NPN silicon germanium microwave transistor

The BGU760F is part of the family of 6th (Si) and 7th (SiGe:C)

generation RF transistors and can be used to perform nearly any RF

function. These next-generation wideband transistors offer the best

RF noise figure versus gain performance, drawing the lowest current.

This performance allows for better signal reception at low power and

enables RF receivers to operate more robustly in noisy environments.

Features

` System optimized gain of 12.5 dB @ 2.4 GHz and 11 dB @ 5.5 GHz

` Low noise figure (NF) of 1.1 dB @ 2.4 GHz and 5.5 GHz

` High input 1 dB gain compression (Pi(1dB) ) of -8 dBm @ 2.4 GHz and

-5 dBm @ 5.5 GHz

` High input third order intercept point IP3I of +3 dBm @ 2.4 GHz and

+8 dBm @ 5.5 GHz

` Only 8 external components required

NXP Semiconductors RF Manual 16th edition

29

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