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STQ1NK60ZR View Datasheet(PDF) - Microsemi Corporation

Part Name
Description
Manufacturer
STQ1NK60ZR Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Electrical ratings
1
Electrical ratings
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
IDM(1)
PTOT
Drain-Source Voltage (VGS = 0)
Drain-Gate Voltage (RGS = 20K)
Gate-Source Voltage
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC=100°C
Drain Current (pulsed)
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-D) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt(2) Peak Diode Recovery voltage slope
TJ
Operating Junction Temperature
Tstg
Storage Temperature
1. Pulse width limited by safe operating area
2. ISD ≤0.3A, di/dt 200A/µs, VDD =80%V(BR)DSS
Value
IPAK
0.8
0.5
3.2
25
0.24
TO-92 SOT-223
600
600
± 30
0.3
0.3
0.189
1.2
3
3.3
0.25
0.26
800
4.5
-55 to 150
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
°C
Table 2. Thermal resistance
Symbol
Parameter
Rthj-case
Rthj-a
Rthj-lead
Tl
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Thermal resistance junction-lead Max
Maximum lead temperature for soldering
purpose
1. When mounted on 1 inch² FR-4 board, 2 Oz Cu
IPAK
5
100
--
Value
Unit
TO-92 SOT-223
--
--
°C/W
120 37.87(1) °C/W
40
--
°C/W
275
260
°C
Table 3. Avalanche data
Symbol
Parameter
Avalanche Curent, Repetitive or Noy-Repetitive
IAR
(pulse width limited by Tj Max)
Single pulse avalanche Energy
EAS
(starting Tj=25°C, Id=Iar, Vdd=50V)
Value
0.8
60
Unit
A
mJ
2/14
Rev 7
 

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