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FDS6912 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
FDS6912 Datasheet PDF : 5 Pages
1 2 3 4 5
Typical Characteristics (continued)
10
ID = 6.3A
8
6
VDS = 5V
10V
15V
4
2
0
0
4
8
12
16
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
2000
1000
C iss
500
200
f = 1 MHz
VGS = 0V
80
0.1 0.3
13
C oss
C rss
10
30
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
100
20
10
RDS(ON) LIMIT
100us
1ms
10ms
2
0.5
VGS = 10V
SINGLE PULSE
0.05 RθJA = 135 °C/W
TA = 25°C
100ms
1s
DC10s
0.01
0.1 0.2
0.5
1
2
5
10
20
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 9. Maximum Safe Operating Area.
30
SINGLE PULSE
25
R θJA= 135°C/W
TA = 25°
20
15
10
5
0
0.01
0.1
1
10
100
SINGLE PULSE TIME (SEC)
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0001
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.001
0.01
0.1
1
t 1, TIME (sec)
R θJA (t) = r(t) * R θJA
R θJA = 135°C/W
P(pk)
t1
t2
TJ - TA = P * R θJA(t)
Duty Cycle, D = t1 /t2
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6912 Rev E (W)
 

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