2PA1576R,135 View Datasheet(PDF) - NXP Semiconductors.
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Description
Manufacturer
| 2PA1576R,135 Datasheet PDF : 0 Pages | |||
NXP Semiconductors
2PA1576
PNP general-purpose transistor
7. Characteristics
Table 6. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
ICBO
collector-base IE = 0 A; VCB = −30 V
-
-
−100 nA
cut-off current IE = 0 A; VCB = −30 V;
-
-
−5
μA
Tj = 150 °C
IEBO
emitter-base
IC = 0 A; VEB = −4 V
cut-off current
-
-
−100 nA
hFE
DC current gain IC = −1 mA; VCE = −6 V
2PA1576Q
120
-
270
2PA1576R
180
-
390
2PA1576S
270
-
560
VCEsat
collector-emitter IC = −50 mA;
saturation
IB = −5 mA
voltage
[1] -
-
−500 mV
Cc
collector
IE = ie = 0 A;
-
2.5
3.5
pF
capacitance
VCB = −12 V; f = 1 MHz
fT
transition
IC = −2 mA;
frequency
VCE = −12 V;
f = 100 MHz
100
-
-
MHz
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2PA1576_6
Product data sheet
Rev. 06 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
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