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1N1190AR View Datasheet(PDF) - Unspecified

Part Name
Description
Manufacturer
1N1190AR
ETC
Unspecified ETC
1N1190AR Datasheet PDF : 2 Pages
1 2
Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types up to 600 V VRRM
1N1183A thru 1N1190AR
VRRM = 50 V - 600 V
IF = 40 A
DO-5 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N1183 (R) 1N1184 (R) 1N1186 (R) 1N1188 (R) 1N1190 (R) Unit
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
VRRM
VRMS
VDC
IF
TC 150 °C
50
100
200
35
70
140
50
100
200
40
40
40
Surge non-repetitive forward
current, Half Sine Wave
IF,SM TC = 25 °C, tp = 8.3 ms
800
800
800
400
600
V
280
420
V
400
600
V
40
40
A
800
800
A
Operating temperature
Tj
Storage temperature
Tstg
-65 to 200 -65 to 200 -65 to 200 -65 to 200 -65 to 200 °C
-65 to 200 -65 to 200 -65 to 200 -65 to 200 -65 to 200 °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
VF
IR
Thermal characteristics
Thermal resistance, junction -
case
RthJC
Conditions
1N1183 (R) 1N1184 (R) 1N1186 (R) 1N1188 (R) 1N1190 (R) Unit
IF = 40 A, Tj = 25 °C
1.1
1.1
1.1
VR = 50 V, Tj = 25 °C
10
10
10
VR = 50 V, Tj = 140 °C
15
15
15
1.1
1.1
V
10
10
μA
15
15
mA
1.25
1.25
1.25
1.25
1.25 °C/W
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