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Z0107NA0412 データシートの表示(PDF) - NXP Semiconductors.

部品番号コンポーネント説明メーカー
Z0107NA0412 4Q Triac NXP
NXP Semiconductors. NXP
Z0107NA0412 Datasheet PDF : 15 Pages
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NXP Semiconductors
Z0107NA0
4Q Triac
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C;
see Figure 7
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C;
see Figure 7
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C;
see Figure 7
VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C;
see Figure 7
IL
latching current
VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C;
see Figure 8
VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C;
see Figure 8
VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C;
see Figure 8
VD = 12 V; IG = 0.1 A; T2- G+; Tj = 25 °C;
see Figure 8
IH
holding current
VT
on-state voltage
VGT
gate trigger voltage
VD = 12 V; Tj = 25 °C; see Figure 9
IT = 1 A; Tj = 25 °C; see Figure 10
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
see Figure 11
VD = 800 V; IT = 0.1 A; Tj = 125 °C;
see Figure 11
ID
off-state current
Dynamic characteristics
VD = 800 V; Tj = 125 °C
dVD/dt
rate of rise of off-state voltage VDM = 536 V; Tj = 110 °C; gate open
circuit; exponential waveform;
see Figure 12
dVcom/dt
rate of change of
commutating voltage
VD = 400 V; Tj = 110 °C;
dIcom/dt = 0.44 A/ms; gate open circuit
Min Typ Max Unit
0.3 -
5
mA
0.3 -
5
mA
0.3 -
5
mA
0.3 -
7
mA
-
-
10 mA
-
-
25 mA
-
-
10 mA
-
-
10 mA
-
-
10 mA
-
1.3 1.6 V
-
-
1.3 V
0.2 -
-
V
-
-
0.5 mA
100 -
-
V/µs
1
-
-
V/µs
Z0107NA0
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 12 May 2011
© NXP B.V. 2011. All rights reserved.
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