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Z0103NN0135 データシートの表示(PDF) - NXP Semiconductors.

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Z0103NN0135 4Q Triac NXP
NXP Semiconductors. NXP
Z0103NN0135 Datasheet PDF : 15 Pages
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NXP Semiconductors
Z0103NN0
4Q Triac
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Static characteristics
IGT
gate trigger current
IL
latching current
IH
holding current
VT
on-state voltage
VGT
gate trigger voltage
ID
off-state current
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
dVcom/dt
rate of change of
commutating voltage
Conditions
Min Typ Max Unit
VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; 0.2 -
see Figure 9
3
mA
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C;
0.2
-
see Figure 9
3
mA
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C;
see Figure 9
0.2 -
3
mA
VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C;
0.2
-
see Figure 9
5
mA
VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C; -
-
7
mA
see Figure 10
VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C; -
-
20 mA
see Figure 10
VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C;
-
-
7
mA
see Figure 10
VD = 12 V; IG = 0.1 A; T2- G+; Tj = 25 °C; -
-
7
mA
see Figure 10
VD = 12 V; Tj = 25 °C; see Figure 11
IT = 1.4 A; Tj = 25 °C; see Figure 12
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
see Figure 13
-
-
7
mA
-
1.3 1.6 V
-
-
1.3 V
VD = 800 V; IT = 0.1 A; Tj = 125 °C;
see Figure 13
0.2 -
-
V
VD = 800 V; Tj = 125 °C
-
-
0.5 mA
VDM = 536 V; Tj = 110 °C; gate open
circuit; exponential waveform;
see Figure 14
VD = 400 V; Tj = 110 °C;
dIcom/dt = 0.44 A/ms; gate open circuit
80 -
-
V/µs
0.5 -
-
V/µs
Z0103NN0
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 21 March 2011
© NXP B.V. 2011. All rights reserved.
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