DTDG14 View Datasheet(PDF) - ROHM Semiconductor

Part Name

Description

Manufacturer

DTDG14

Digital NPN transistor (with resistor and zener diode)

ROHM Semiconductor 

Transistors

DTDG14GP

Digital transistor (built in resistor and

zener diode) Driver (60V, 1A)

DTDG14GP

!Features

1) High hFE.

(typ. hFE =750 VCE/IC=2V/0.5A)

2) Low saturation voltage,

VCE(sat)=0.4V

(IC/IB=500mA/5mA)

3) Built-in zener diode to protect the

transistor against reverse voltages

when connected to alow load.

!Structure

NPN digital transistor

(with single built resistor and zener

diode)

!External dimensions (Units : mm)

4.5+−00..21

1.6±0.1

1.5−+00..12

ROHM : MPT3

EIAJ : SC-62

(1) (2) (3)

0.4±0.1

1.5±0.1

0.5±0.1

3.0±0.2

0.4±0.1

1.5±0.1

Abbreviated symbol : E01

0.4−+00..015

(1) Base

(2) Collector

(3) Emitter

!Absolute maximum ratings (Ta = 25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

VCBO

VCEO

VEBO

IC

ICP

Collector power dissipation

PC

Junction temperature

Tj

Storage temperature

Tstg

∗1 Pw≤10ms, Duty cycle≤1/2

∗2 When mounted on a 40×40×0.7 mm ceramic board.

Limits

60±10

60±10

5

1

2

0.5

2

150

−55~+150

Unit

V

V

V

A

A(Pulse) ∗1

W

∗2

°C

°C

!Equivalent circuit

(1)

R

(1) : Base

(2) : Collector

(3) : Emitter

(2)

(3)

R=10kΩ

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