Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol Parameter
Conditions
OFF CHARACTERISTICS
BVDSS
∆BVDSS/∆TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
IGSS
Gate - Body Leakage Current
ON CHARACTERISTICS (Note)
∆VGS(th)/∆TJ
VGS(th)
RDS(ON)
Gate Threshold Voltage Temp. Coefficient
Gate Threshold Voltage
Static Drain-Source On-Resistance
ID(ON)
On-State Drain Current
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
VGS = 0 V, ID = -250 µA
ID = -250 µA, Referenced to 25 o C
VDS = -20 V, VGS = 0 V
TJ = 55°C
VGS = -8 V, VDS= 0 V
ID = -250 µA, Referenced to 25 oC
VDS = VGS, ID = -250 µA
VGS = -2.7 V, ID = -0.05 A
VGS = -4.5 V, ID = -0.2 A
TJ =125°C
VGS = -2.7 V, VDS = -5 V
VDS = -5 V, ID= -0.2 A
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note)
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
tD(on)
Turn - On Delay Time
tr
Turn - On Rise Time
VDD = -6 V, ID = -0.2 A,
VGS = -4.5 V, RGEN = 50 Ω
tD(off)
Turn - Off Delay Time
tf
Turn - Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS = -5 V, ID = -0.2 A,
VGS = -4.5 V
Qgd
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = -0.2 A (Note)
Note:
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
Min
-25
-0.65
-0.05
Typ
-20
1.9
-1
10.6
7.9
12
0.135
11
7
1.4
5
8
9
5
0.22
0.11
0.04
-1
Max Units
V
mV / oC
-1
µA
-10
µA
-100 nA
mV / oC
-1.5
V
13
Ω
10
18
A
S
pF
pF
pF
12
ns
16
ns
18
ns
10
ns
0.31 nC
nC
nC
-0.2
A
-1.5
V
FDV302P REV. F