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# X006 데이터 시트보기 (PDF) - STMicroelectronics

 부품명 상세내역 제조사 X006 0.8 A sensitive gate SCRs STMicroelectronics
X006 Datasheet PDF : 9 Pages
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X006
Characteristics
Figure 11. Relative variation of dV/dt immunity Figure 12. Relative variation of dV/dt immunity
versus gate-cathode resistance
versus gate-cathode capacitance
(typical values)
(typical values)
dV/dt[RGK] / dV/dt[RGK=1kΩ]
100.0
VD = 0.67 x VDRM
dV/dt[CGK] / dV/dt[RGK=1kΩ]
100
VD = 0.67 x VDRM
RGK = 1kΩ
10.0
10
1.0
0.1
1.0E-01
RGK(kΩ)
1.0E+00
1
1.0E+01
1
CGK(nF)
10
Figure 13.
Surge peak on-state current versus Figure 14.
number of cycles
Non repetitive surge peak on-state
current for a sinusoidal pulse with
width tP < 10ms, and corresponding
value of I2t
ITSM(A)
10
9
8
7
6
5
4
Repetitive
TC=25°C
3
2
1
0
1
Non repetitive
Tj initial=25°C
Number of cycles
10
100
tp=10ms
One cycle
1000
ITSM(A), I2t (A2s)
1.E+02
ITSM
1.E+01
Tj initial = 25°C
1.E+00
1.E-01
0.01
tp(ms)
0.10
I2t
1.00
10.00
Figure 15.
On-state characteristics (maximum values)
ITM(A)
10.00
Tj max.:
Vt0=0.85V
Rd=245mΩ
1.00
Tj=125°C
0.10
Tj=25°C
VTM(V)
0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
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