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X006 데이터 시트보기 (PDF) - STMicroelectronics

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X006 0.8 A sensitive gate SCRs ST-Microelectronics
STMicroelectronics ST-Microelectronics
X006 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Characteristics
X006
1
Characteristics
Table 1.
Symbol
Absolute ratings (limiting values)
Parameter
IT(RMS) RMS on-state current (180 °Conduction angle)
IT(AV) Average on-state current (180 °Conduction angle)
ITSM Non repetitive surge peak on-state current
I²t I²t Value for fusing
dI/dt
IGM
PG(AV)
Tstg
Tj
Critical rate of rise of on-state current
IG = 2 x IGT , tr 100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Value
Unit
TO-92
Tl = 85 °C
0.8
A
SOT-223 Ttab = 100 °C
TO-92
Tl = 85 °C
0.5
A
SOT-223 Ttab = 100 °C
tp = 8.3 ms
Tj = 25 °C
tp = 10 ms
tp = 10 ms Tj = 25 °C
10
A
9
0.4
A2S
F = 60 Hz Tj = 125 °C
50
A/µs
tp = 20 µs
Tj = 125 °C
Tj = 125 °C
1
A
0.1
W
- 40 to + 150
- 40 to + 125
°C
Table 2.
Symbol
Electrical characteristics
Test Conditions
IGT
VGT
VGD
VRG
IH
IL
dV/dt
VTM
Vt0
Rd
IDRM
IRRM
VD = 12 V, RL = 140 Ω
VD = VDRM, RL = 3.3 kΩ , RGK = 1 kΩ
IRG = 10 µA
IT = 50 mA, RGK = 1 kΩ
IG = 1 mA, RGK = 1 kΩ
VD = 67% VDRM, RGK = 1 kΩ
ITM = 1 A, tp = 380 µs
Threshold voltage
Dynamic resistance
VDRM = VRRM , RGK = 1 kΩ
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
MIN.
MAX.
MAX.
MIN.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
MAX.
Value
15
200
0.8
0.2
5
5
6
25
1.35
0.85
245
1
100
Unit
µA
V
V
V
mA
mA
V/µs
V
V
mΩ
µA
2/9
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