25Q16 View Datasheet(PDF) - Winbond

Part Name

Description

Manufacturer

25Q16

8M-BIT, 16M-BIT AND 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI

Winbond 

W25Q80, W25Q16, W25Q32

11.3 Endurance and Data Retention

PARAMETER

CONDITIONS

MIN

Erase/Program Cycles 4KB sector, 32/64KB block or full chip. 100,000

Data Retention

55°C

MAX

20

UNIT

cycles

years

11.4 Power-up Timing and Write Inhibit Threshold

PARAMETER

VCC (min) to /CS Low

Time Delay Before Write Instruction

Write Inhibit Threshold Voltage

SYMBOL

tVSL(1)

tPUW(1)

VWI(1)

SPEC

MIN

10

1

1

Note:

1. These parameters are characterized only.

MAX

10

2

UNIT

µs

ms

V

Figure 30. Power-up Timing and Voltage Levels

- 47 -

Publication Release Date: September 26, 2007

Preliminary - Revision B

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