UF1004E View Datasheet(PDF) - Gulf Semiconductor

Part Name

Description

Manufacturer

UF1004E

ULTRAFAST EFFICIENT PLASTIC SILICON RECTIFIER

Gulf Semiconductor 

UF1001E THRU UF1007E

ULTRAFAST EFFICIENT

PLASTIC SILICON RECTIFIER

VOLTAGE：50 TO 1000V

CURRENT： 1.0A

FEATURE

Low power loss

High surge capability

Glass passivated chip junction

Ultra-fast recovery time for high efficiency

High temperature soldering guaranteed

250℃/10sec/0.375″lead length at 5 lbs tension

A405

MECHANICAL DATA

Terminal：Plated axial leads solderable per

MIL-STD 202E, method 208C

Case：Molded with UL-94 Class V-0 recognized Flame

Retardant Epoxy

Polarity：color band denotes cathode

Mounting position：any

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(single-phase, half -wave, 60HZ, resistive or inductive load rating at 25℃, unless otherwise stated)

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC blocking Voltage

Maximum Average Forward Rectified

Current 3/8″lead length at Ta =55℃

Peak Forward Surge Current 8.3ms single

half sine-wave superimposed on rated load

Maximum Forward Voltage at Forward current

1A Peak

Maximum DC Reverse Current Ta =25℃

at rated DC blocking voltage Ta =120℃

Maximum Reverse Recovery Time (Note 1)

Typical Junction Capacitance

(Note 2)

Typical Thermal Resistance

(Note 3)

Storage and Operating Junction Temperature

SYMBOL UF1 UF1 UF1 UF1 UF1 UF1 UF1 units

001E 002E 003E 004E 005E 006E 007E

Vrrm

50 100 200 400 600 800 1000 V

Vrms

35 70 140 280 420 560 700 V

Vdc

50 100 200 400 600 800 1000 V

If(av)

1.0

A

Ifsm

30.0

A

Vf

Ir

Trr

Cj

R(ja)

Tstg,Tj

1.0

1.3

1.7

5.0

100.0

50

75

20

10

25.0

-55 to +150

V

μA

μA

nS

pF

℃/W

℃

Note：

1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A

2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc

3. Thermal Resistance from Junction to Ambient at 3/8″lead length, P.C. Board Mounted

Rev.1

www.gulfsemi.com

Share Link: