TYN612MRG View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
TYN612MRG Datasheet PDF : 8 Pages
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Characteristics
1
Characteristics
TYN612M
Table 2. Electrical characteristics (Tj = 25° C, unless otherwise specified)
Symbol
Test Conditions
Value
IGT
VD = 12 V RL = 140 Ω
VGT
VD = 12 V RL = 140 Ω
VGD
IH
IL
dV/dt
VTM
Vt0
Rd
IDRM
IRRM
VD = VDRM RL = 3.3 kΩ
IT = 500 mA Gate open
IG = 1.2 IGT
VD = 67 % VDRM Gate open
ITM = 24 A tp = 380 µs
Threshold voltage
Dynamic resistance
VDRM = VRRM
MIN.
1.5
MAX.
5
MIN.
0.5
TYP.
0.7
MAX.
1.3
Tj = 125° C
MIN.
0.2
MAX.
20
MAX.
40
Tj =125° C
MIN.
50
Tj = 25° C
MAX.
1.6
Tj = 125° C
MAX.
0.85
Tj = 125° C
MAX.
30
Tj = 25° C
5
MAX.
Tj = 125° C
2
Table 3. Thermal resistance
Symbol
Rth(j-c)
Junction to case (DC)
Rth(j-a)
Junction to ambient (DC)
Parameter
TO-220AB
TO-220FPAB
TO-220AB
TO-220FPAB
Value
1.3
4.5
55
55
Unit
mA
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
Unit
° C/W
° C/W
Figure 1.
P(W)
12
11 α = 180°
10
9
8
7
6
5
4
3
2
1
0
0
1
Maximum average power
dissipation versus average
on-state current
IT(AV)(A)
2
3
4
5
6
7
8
Figure 2.
Average and D.C. on-state current
versus case temperature
(TO-220AB)
IT(AV)(A)
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
9
0
25
D.C.
α = 180°
TC(°C)
50
75
100
125
2/8
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