TN1215-X00G-T View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
TN1215-X00G-T Datasheet PDF : 12 Pages
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Characteristics
TN12, TS12 and TYNx12 Series
Figure 3.
Average and D.C. on-state current
versus ambient temperature
(device mounted on FR4 with
recommended pad layout) (DPAK)
Figure 4.
Relative variation of thermal
impedance junction to case versus
pulse duration
IT(AV)(A)
3.0
2.5
2.0
D.C.
D2PAK
K=[Zth(j-c)/Rth(j-c)]
1.0
0.5
1.5
α = 180°
1.0
DPAK
0.2
0.5
Tamb(°C)
0.0
0.1
0
25
50
75
100
125
1E-3
tp(s)
1E-2
1E-1
1E+0
Figure 5.
Relative variation of thermal
Figure 6.
impedance junction to ambient
versus pulse duration
(recommended pad layout, FR4 PC
board for DPAK)
Relative variation of gate trigger
current and holding current versus
junction temperature for TS12
series
K=[Zth(j-a)/Rth(j-a)]
1.00
0.10
D2PAK
DPAK
TO-220AB / IPAK
0.01
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2
5E+2
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
2.0
1.8
1.6
IGT
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Tj(°C)
0.0
-40 -20
0
20
40
60
IH & IL
RGK = 1kΩ
80 100 120 140
Figure 7.
Relative variation of gate trigger Figure 8.
current and holding current versus
junction temperature for TN12 and
TYNx12 series
Relative variation of holding
current versus gate-cathode
resistance (typical values) for TS12
series
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
2.4
2.2
2.0
1.8
IGT
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Tj(°C)
0.0
-40 -20
0
20
40
60
IH & IL
80 100 120 140
IH[RGK] / IH[RGK=1kΩ]
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1E-2
RGK(kΩ)
1E-1
1E+0
Tj = 25°C
1E+1
4/12
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