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TSAL5300 View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
Manufacturer
TSAL5300 Datasheet PDF : 0 Pages
TSAL5300
High Power Infrared Emitting Diode, Vishay Semiconductors
940 nm, GaAlAs/GaAs
TAPE DIMENSIONS TSAL5300
OPTION
CS21Z
FSZ
GSZ
MSZ
H ± 0.5 mm
22
27
29
25.5
±1
±2
12.7 ± 1
QUANTITY/BOX
1000
1000
1000
1000
Ø 4 ± 0.2
2.54
+
-
0.6
0.1
5.08 ± 0.7
19314
0.9 max.
6.35 ± 0.7
12.7 ± 0.2 Measure limit over 20 index-holes: ± 1
Fig. 10 - 5 mm Devices on Tape
AMMOPACK
The tape is folded in a concertina arrangement and laid in
cardboard box.
If components are required with cathode before the anode
(figure 12), then start of tape should be taken from the side
of the box marked “-”. If components are required with anode
before cathode, then tape should be taken from the side of
the box marked “+”.
Label
Tape feed direction
Diodes: cathode before anode
Transistors: collector before emitter
Tape feed direction
Diodes: anode before cathode
Transistors: emitter before collector
Document Number: 81008
Rev. 2.0, 29-Jun-09
C
A
B
94 8667
Fig. 11 - Tape Direction
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
5
 

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