TSAL5300
Vishay Semiconductors
VISHAY
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward Voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
Temp. Coefficient of VF
IF = 100 mA
Reverse Current
VR = 5 V
Junction capacitance
VR = 0, f = 1 MHz, E = 0
Symbol
Min
Typ.
Max
VF
1.35
1.6
VF
2.6
3
TKVF
- 1.875
IR
10
Cj
25
Unit
V
V
mV/K
µA
pF
Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Radiant Intensity
IF = 100 mA, tp = 20 ms
Ie
30
45
150
IF = 1 A, tp = 100 µs
Ie
260
350
Radiant Power
IF = 100 mA, tp = 20 ms
φe
35
Temp. Coefficient of φe
IF = 20 mA
TKφe
- 0.6
Angle of Half Intensity
ϕ
± 22
Peak Wavelength
IF = 100 mA
λp
940
Spectral Bandwidth
IF = 100 mA
∆λ
50
Temp. Coefficient of λp
IF = 100 mA
TKλp
0.2
Rise Time
IF = 100 mA
tr
800
IF = 1 A
tr
500
Fall Time
IF = 100 mA
tf
800
IF = 1 A
tf
500
Virtual Source Diameter
method: 63 % encircled energy
∅
2.3
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Unit
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
ns
ns
mm
250
250
200
200
150
RthJA
100
50
150
100
RthJA
50
0
0
94 7957
20
40 60
80 100
Tamb - Ambient Temperature ( °C )
Figure 1. Power Dissipation vs. Ambient Temperature
0
0
96 11986
20
40
60
80 100
Tamb – Ambient Temperature ( °C )
Figure 2. Forward Current vs. Ambient Temperature
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2
Document Number 81008
Rev. 1.7, 08-Mar-05