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TS420-600H-TR View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
TS420-600H-TR
ST-Microelectronics
STMicroelectronics ST-Microelectronics
TS420-600H-TR Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
TS420 Series
Fig. 4: Relative variation of gate trigger current
and holding current versus junction temperature.
IGT,IH,IL [Tj] / IGT ,IH,IL [Tj = 25 °C]
2.0
1.8
IGT
1.6
1.4
1.2
1.0
IH & IL
Rgk = 1k
0.8
0.6
0.4
0.2
Tj(°C)
0.0
-40 -20 0 20 40 60 80 100 120 140
Fig. 5: Relative variation of holding current
versus gate-cathode resistance (typical values).
IH[Rgk] / IH[Rgk = 1k]
Rgk(kΩ)
Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
dV/dt[Rgk] / dV/dt [Rgk = 220]
10.00
Tj=125°C
VD=0.67xVDRM
1.00
0.10
0.01
0
Rgk()
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Fig. 8: Surge peak on-state current versus
number of cycles.
ITSM(A)
35
30
25
Non repetitiv e
Tj initial = 25 °C
20
15
Repetitiv e
10
Tcase = 115 °C
5
Number of cycles
0
1
10
tp = 10ms
One cycle
100
1000
Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
dV/dt[Cgk] / dV/dt [Rgk = 220 ]
10
VD = 0.67 x VDRM
Tj = 125°C
Rgk = 220
8
6
4
2
Cgk(nF)
0
0 2 4 6 8 10 12 14 16 18 20 22
Fig. 9: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding values of I²t.
ITSM(A),I 2t(A2s)
300
100
dI/dt
limitattion
Tj initial = 25 °C
ITSM
10
1
0.01
tp(ms)
0.10
1.00
I2t
10.00
4/8
 

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