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Part Name
Description
TPC8111 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
TPC8111
Silicon P Channel MOS Type (U-MOS IV) Field Effect Transistor
Toshiba
TPC8111 Datasheet PDF : 0 Pages
TPC8111
r
th
−
t
w
1000
(1) Device mounted on a glass-epoxy
board (a) (Note 2a)
(2)
(2) Device mounted on a glass-epoxy
board (b) (Note 2b)
(1)
t
=
10 s
100
10
1
0.1
0.001
0.01
0.1
1
10
Pulse width t
w
(s)
Safe Operating Area
100
ID max (pulse)
*
10 ms
*
10
1 ms
*
1
0.1
*:
Single pulse Ta
=
25°C
Curves must be derated
linearly with increase in
temperature.
0.01
0.01
0.1
1
VDSS max
10
100
Drain-source voltage V
DS
(V)
Single pulse
100
1000
6
2006-11-16
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