25
Common source
Pulse test
20
RDS (ON) – Ta
ID = −11 A, −5.5 A, −2.5 A
15
VGS = −4.5 V
10
5
−10
ID = −11 A, −5.5 A, −2.5 A
0
−80
−40
0
40
80
120
160
Ambient temperature Ta (°C)
TPC8111
−100
−10
−1
−0.1
0
IDR – VDS
−10
−5
−3
−1
VGS = 0 V
Common source
Ta = 25°C
Pulse test
0.2
0.4
0.6
0.8
1
Drain-source voltage VDS (V)
50000
30000
Capacitance – VDS
10000
5000
Ciss
3000
1000
500
Common source
300 VGS = 0 V
f = 1 MHz
Coss
Crss
Ta = 25°C
100
−0.1 −0.3
−1
−3
−10
−30
−100
Drain-source voltage VDS (V)
2.0
(1)
1.6
1.2
(2)
0.8
PD – Ta
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
t = 10 s
0.4
0
0
25 50
75 100 125 150 175
Ambient temperature Ta (°C)
Vth – Ta
−2.5
Common source
VDS = −10 V
−2
ID = −1 mA
Pulse test
−1.5
−1
−0.5
0
−80
−40
0
40
80
120
160
Ambient temperature Ta (°C)
Dynamic Input/Output Characteristics
−30
−12
−25
VDD = −24 V
−20
VDS
−12
−15
−6
−10
−5
−10
−6
−12
−8
VGS
VDD = −24 V
−6
Common source
ID = −11 A
−4
Ta = 25°C
Pulse test
−2
0
0
0
20 40
60
80
100 120 140
Total gate charge Qg (nC)
5
2006-11-16