TYNX08RG View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
TYNX08RG Datasheet PDF : 10 Pages
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TN8, TS8 and TYNx08 Series
Table 3: Absolute Ratings (limiting values)
Symbol
Parameter
IT(RMS) RMS on-state current (180° conduction angle)
Value
TS8/TN8 TYN08
Tc = 110°C
8
IT(AV) Average on-state current (180° conduction angle) Tc = 110°C
ITSM
I²t
dI/dt
IGM
PG(AV)
Tstg
Tj
VRGM
Non repetitive surge peak on-
state current
tp = 8.3 ms
tp = 10 ms
I²t Value for fusing
tp = 10 ms
Critical rate of rise of on-state
current IG = 2 x IGT , tr ≤ 100 ns
F = 60 Hz
Peak gate current
tp = 20 µs
Average gate power dissipation
Tj = 25°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 125°C
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage (for TN8 & TYN08 only)
5
73
100
70
95
24.5
45
50
4
1
- 40 to + 150
- 40 to + 125
5
Unit
A
A
A
A2S
A/µs
A
W
°C
V
Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)
■ SENSITIVE
Symbol
Test Conditions
IGT
VGT
VGD
VRG
IH
IL
dV/dt
VTM
VD = 12 V RL = 140 Ω
VD = VDRM RL = 3.3 kΩ RGK = 220 Ω
IRG = 10 µA
IT = 50 mA RGK = 1 kΩ
IG = 1 mA RGK = 1 kΩ
VD = 65 % VDRM RGK = 220 Ω
ITM = 16 A tp = 380 µs
Tj = 125°C
Tj = 125°C
Tj = 25°C
MAX.
MAX.
MIN.
MIN.
MAX.
MAX.
MIN.
MAX.
Vt0
Rd
IDRM
IRRM
Threshold voltage
Dynamic resistance
VDRM = VRRM RGK = 220 Ω
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MAX.
MAX.
MAX.
TS820
200
0.8
0.1
8
5
6
5
1.6
0.85
46
5
1
Unit
µA
V
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
2/10
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