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TYN608RG View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
TYN608RG
ST-Microelectronics
STMicroelectronics ST-Microelectronics
TYN608RG Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Characteristics
TN805, TN815, TS820, TYN608
Figure 3. Average and DC on-state current
versus ambient temperature
IT(AV)(A)
2,5
D.C.
2,0
α = 180°
1,5
Recommended pad layout,
FR4 printed circuit board
TO-220AB
TO-220FPAB
Figure 4.
Relative variation of thermal
impedance junction to case versus
pulse duration
K=[Zth(j-c)/Rth(j-c)]
1.0
0.5
1,0
0,5
0,0
0
DPAK
IPAK
Tamb(°C)
25
50
75
100
0.2
0.1
125
1E-3
tp(s)
1E-2
1E-1
1E+0
Figure 5.
Relative variation of thermal
impedance junction to ambient
versus pulse duration
Figure 6.
Relative variation of gate trigger
current and holding current versus
junction temperature for TS820
K=[Zth(j-a)/Rth(j-a)]
1.00
Recommended pad layout,
FR4 printed circuit board
0.10
DPAK
TO-220AB / IPAK
TO-220FPAB
tp(s)
0.01
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
2.0
1.8
IGT
1.6
1.4
1.2
1.0
IH & IL
RGK = 1kΩ
0.8
0.6
0.4
0.2
Tj(°C)
0.0
-40 -20
0
20 40
60
80 100 120 140
Figure 7.
Relative variation of gate trigger Figure 8.
and holding current versus junction
temperature
Relative variation of holding
current versus gate-cathode
resistance (typical values)
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
2.4
2.2
2.0
IGT
1.8
1.6
1.4
1.2
IH & IL
1.0
0.8
0.6
0.4
0.2
Tj(°C)
0.0
-40 -20
0
20
40
60
TN8 and TYNx8
80 100 120 140
IH[RGK] / IH[RGK=1kΩ]
6.0
5.5 TS8
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1E-2
RGK(kΩ)
1E-1
1E+0
Tj = 25°C
1E+1
4/13
Doc ID 7476 Rev 7
 

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