MBM29F033C View Datasheet(PDF) - Fujitsu

Part Name

Description

Manufacturer

MBM29F033C

FLASH MEMORY CMOS 32M (4M × 8) BIT

Fujitsu 

FUJITSU SEMICONDUCTOR

DATA SHEET

FLASH MEMORY

CMOS

32M (4M × 8) BIT

DS05-20869-3E

MBM29F033C-70/-90/-12

s FEATURES

• Single 5.0 V read, write, and erase

Minimizes system level power requirements

• Compatible with JEDEC-standard commands

Pinout and software compatible with single-power supply Flash

Superior inadvertent write protection

• 40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type)

• Minimum 100,000 write/erase cycles

• High performance

70 ns maximum access time

• Sector erase architecture

Uniform sectors of 64K bytes each

Any combination of sectors can be erased. Also supports full chip erase

• Embedded EraseTM Algorithms

Automatically preprograms and erases the chip or any sector

• Embedded ProgramTM Algorithms

Automatically programs and verifies data at specified address

• Data Polling and Toggle Bit feature for detection of program or erase cycle completion

• Ready/BUSY output (RY/BY)

Hardware method for detection of program or erase cycle completion

• Low VCC write inhibit ≤ 3.2 V

• Hardware RESET pin

Resets internal state machine to the read mode

• Erase Suspend/Resume

Supports reading or programming data to a sector not being erased

• Sector group protection

Hardware method that disables any combination of sector groups from write or erase operation (a sector group

consists of 4 adjacent sectors of 64K bytes each)

• Temporary sector groups unprotection

Hardware method temporarily enable any combination of sectors from write or erase operations

Embedded Erase™, Embedded Program™ and ExpressFlash™ are trademarks of Advanced Micro Devices, Inc.

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