DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

0105-100 View Datasheet(PDF) - GHz Technology

Part Name
Description
Manufacturer
0105-100 Datasheet PDF : 2 Pages
1 2
0105-100
100 Watts, 28 Volts, Class AB
Defcom 100 - 500 MHz
GENERAL DESCRIPTION
The 0105-100 is a double input matched COMMON EMITTER broadband
transistor specifically intended for use in the 100-500 MHz frequency band. It
may be operated in Class AB or C. Gold metallization and silicon diffused
resistors ensure ruggedness and high reliability.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC
270 Watts
Maximum Voltage and Current
BVces Collector to Emiter Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
65 Volts
4.0 Volts
16 A
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 40 to +150oC
+200oC
CASE OUTLINE
55JT, Style 2
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
ηc
VSWR
Power Output
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
F = 500 MHz
Vcc = 28 Volts
100
Watts
18
24 Watts
6.2 7.5
dB
50
%
5:1
BVebo
BVces
BVceo
Cob2
hFE
θjc
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Emitter Breakdown
Output Capacitance
DC - Current Gain
Thermal Resistance
Ie = 5 mA
Ic = 100 mA
Ie = 50 mA
Vcb = 28 V, F = 1 MHz
Vce = 5 V, Ic = 500 mA
4.0
Volts
60
Volts
31
Volts
140
pF
10
0.65 oC/W
Note 2: Both sides together, all other specifications each side tested separately
Issue August 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]