TEA1110A View Datasheet(PDF) - Philips Electronics

Part Name

Description

Manufacturer

TEA1110A

Low voltage versatile telephone transmission circuit with dialler interface

Philips Electronics 

Philips Semiconductors

Low voltage versatile telephone

transmission circuit with dialler interface

Product specification

TEA1110A

CHARACTERISTICS

Iline = 15 mA; VEE = 0 V; RSLPE = 20 Ω; AGC pin connected to VEE; Zline = 600 Ω; f = 1 kHz; Tamb = 25 °C;

unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX.

Supplies (pins VLN, VCC, SLPE and REG)

Vref

stabilized voltage between LN and

SLPE

VLN

DC line voltage

VLN(exR)

∆VLN(T)

DC line voltage with an external

resistor RVA

DC line voltage variation with

temperature referred to 25 °C

Iline = 1 mA

Iline = 4 mA

Iline = 15 mA

Iline = 140 mA

RVA(SLPE−REG) = 27 kΩ

Tamb = −25 to +75 °C

ICC

VCC

RCCint

internal current consumption

VCC = 2.9 V

supply voltage for peripherals

IP = 0 mA

equivalent supply voltage resistance IP = 0.5 mA

Microphone amplifier (pins MIC+ and MIC−)

Zi

input impedance

differential between pins

MIC+ and MIC−

Gvtx

∆Gvtx(f)

single-ended between pins

MIC+/MIC− and VEE

voltage gain from MIC+/MIC− to LN

gain variation with frequency

referred to 1 kHz

VMIC = 4 mV (RMS)

f = 300 to 3400 Hz

∆Gvtx(T)

gain variation with temperature

referred to 25 °C

Tamb = −25 to +75 °C

CMRR

common mode rejection ratio

VLN(max)(rms) maximum sending signal

(RMS value)

Vnotx

noise output voltage at pin LN; pins

MIC+/MIC− shorted through 200 Ω

Iline = 15 mA; THD = 2%

Iline = 4 mA, THD = 10%

psophometrically

weighted (P53 curve)

3.1

−

−

3.35

−

−

−

−

−

−

−

−

42.7

−

−

−

1.4

−

−

3.35 3.6

1.6 −

2.3 −

3.65 3.95

−

6.9

4.4 −

±30 −

1.1 1.4

2.9 −

550 620

64 −

32 −

43.7 44.7

±0.2 −

±0.3 −

80 −

1.7 −

0.8 −

−78.5 −

Receiving amplifier (pins IR, QR and GAR)

Zi

Gvrx

∆Gvrx(f)

input impedance

voltage gain from IR to QR

gain variation with frequency

referred to 1 kHz

−

VIR = 4 mV (RMS)

32

f = 300 to 3400 Hz

−

∆Gvrx(T)

gain variation with temperature

referred to 25 °C

Tamb = −25 to +75 °C

−

20 −

33 34

±0.2 −

±0.3 −

UNIT

V

V

V

V

V

V

mV

mA

V

Ω

kΩ

kΩ

dB

dB

dB

dB

V

V

dBmp

kΩ

dB

dB

dB

1997 Apr 22

11

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