Philips Semiconductors
Low voltage telephone transmission circuit with
dialler interface and regulated strong supply
Product specification
TEA1114A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
VLN
positive continuous line voltage
repetitive line voltage during switch-on or
line interruption
IDD
Vn(max)
Iline
maximum input current at pin VDD
maximum voltage on all pins except pin VDD
line current
RSLPE = 20 Ω;
see Figs 11 and 12
Ptot
total power dissipation
TEA1114A
Tamb = 75 °C;
see Figs 11 and 12
TEA1114AT
TEA1114AUH; note 1
Tstg
Tamb
Tj
storage temperature
ambient temperature
junction temperature
MIN.
VEE − 0.4
VEE − 0.4
MAX.
12
13.2
UNIT
V
V
−
75
mA
VEE − 0.4 VCC + 0.4 V
−
140
mA
−
625
mW
−
416
mW
−
−
−40
+125
°C
−25
+75
°C
−
125
°C
Note
1. Mostly dependent on the maximum required ambient temperature, on the voltage between LN and SLPE and on the
thermal resistance between die ambient temperature. This thermal resistance depends on the application board
layout and on the materials used. Figure 13 shows the safe operating area versus this thermal resistance for ambient
temperature Tamb = 75 °C.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth(j-a)
thermal resistance from junction to ambient in free air; note 1
TEA1114A
TEA1114AT
TEA1114AUH
Note
1. Mounted on epoxy board 40.1 × 19.1 × 1.5 mm.
VALUE
70
115
tbf by customer
application
UNIT
K/W
K/W
K/W
2000 Mar 21
12