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TEA1112AT/C1 View Datasheet(PDF) - Philips Electronics

Part Name
Description
Manufacturer
TEA1112AT/C1 Datasheet PDF : 20 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Philips Semiconductors
Low voltage versatile telephone
transmission circuits with dialler interface
Product specification
TEA1112; TEA1112A
handbook, full pagewidth
Zline
VEE
RCC
LN
Zbal
Im
IR
RSLPE
Rast1 RA
SLPE
Zir
MBE786
Fig.11 Equivalent circuit of an anti-sidetone network in a Wheatstone bridge configuration.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VLN
Vn(max)
Iline
Ptot
Tstg
Tamb
positive continuous line voltage
repetitive line voltage during switch-on or
line interruption
maximum voltage on pins ILED, SLPE
maximum voltage on all other pins
line current
total power dissipation
TEA1112; TEA1112A
TEA1112T; TEA1112AT
IC storage temperature
operating ambient temperature
RSLPE = 20 ; see
Figs 12 and 13
Tamb = 75 °C;
see Figs 12 and 13
MIN.
MAX.
VEE 0.4 12
VEE 0.4 13.2
UNIT
V
V
VEE 0.4 VLN + 0.4 V
VEE 0.4 VCC + 0.4 V
140
mA
625
mW
416
mW
40
+125
°C
25
+75
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient in free air (TEA1112; TEA1112A)
thermal resistance from junction to ambient in free air mounted on epoxy board
40.1 × 19.1 × 1.5 mm (TEA1112T; TEA1112AT)
1997 Mar 26
10
VALUE
80
130
UNIT
K/W
K/W
 

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