Philips Semiconductors
Hands free IC
Product specification
TEA1094; TEA1094A
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX.
DYNAMIC LIMITER
tatt
attack time when VRIN jumps from RGAR = 374 kΩ
20 mV to 20 mV + 10 dB
trel
release time when VRIN jumps
RGAR = 374 kΩ
from 20 mV + 10 dB to 20 mV
THD
VBB(th)
tatt
total harmonic distortion at
VRIN = 20 mV + 10 dB
VBB limiter threshold
attack time when VBB jumps below
VBB(th)
RGAR = 374 kΩ; t > tatt
MUTE RECEIVE
VDLC(th)
threshold voltage required on pin
DLC/MUTER to obtain mute
receive condition
IDLC(th)
threshold current sourced by
pin DLC/MUTER in mute receive
condition
VDLC = 0.2 V
∆Gvrxm
voltage gain reduction in mute
receive condition
VDLC < 0.2 V
−
−
5
−
250 −
−
0.9 5
−
2.9 −
−
1
−
VGND − 0.4 −
0.2
−
100 −
−
80 −
Envelope and noise detectors (TSEN, TENV, RSEN, RENV, RNOI and TNOI)
PREAMPLIFIERS
Gv(TSEN)
Gv(RSEN)
voltage gain from MIC to TSEN
voltage gain between RIN1 and
RIN2 to RSEN
37.5
40 42.5
−2.5
0 +2.5
LOGARITHMIC COMPRESSOR AND SENSITIVITY ADJUSTMENT
∆Vdet(TSEN) sensitivity detection on pin TSEN; ITSEN = 0.8 to 160 µA
−
voltage change on pin TENV
when doubling the current from
TSEN
∆Vdet(RSEN) sensitivity detection on
IRSEN = 0.8 to 160 µA
−
pin RSEN; voltage change on
pin RENV when doubling the
current from RSEN
18 −
18 −
SIGNAL ENVELOPE DETECTORS
Isource(ENV) maximum current sourced from
pin TENV or RENV
Isink(ENV)
maximum current sunk by
pin TENV or RENV
∆VENV
voltage difference between
pins RENV and TENV
−
0.75
when 10 µA is sourced
−
from both RSEN and
TSEN; envelope detectors
tracking; note 3
120 −
1 1.25
±3 −
UNIT
ms
ms
%
V
ms
V
µA
dB
dB
dB
mV
mV
µA
µA
mV
1996 Jul 15
16