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80025 Ver la hoja de datos (PDF) - Philips Electronics

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80025 IC card interface Philips
Philips Electronics Philips
80025 Datasheet PDF : 28 Pages
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Philips Semiconductors
IC card interface
Product specification
TDA8002
FEATURES
Single supply voltage interface (3.3 or 5 V environment)
Low-power sleep mode
Three specific protected half-duplex bidirectional
buffered I/O lines
VCC regulation (5 V ±5%, ICC <65 mA at VDD = 5 V, with
controlled rise and fall times
Thermal and short-circuit protections with current
limitations
Automatic ISO 7816 activation and deactivation
sequences
Enhanced ESD protections on card side (>6 kV)
Clock generation for the card up to 12 MHz with
synchronous frequency changes
Clock generation up to 20 MHz (auxiliary clock)
Synchronous and asynchronous cards (memory and
smart cards)
ISO 7816, GSM11.11 compatibility and EMV (Europay,
Mastercard, Visa) compliant
Step-up converter for VCC generation
Supply supervisor for spikes elimination and emergency
deactivation.
APPLICATIONS
IC card readers for:
– GSM applications
– banking
– electronic payment
– identification
– Pay TV
– road tolling.
GENERAL DESCRIPTION
The TDA8002 is a complete low-power, analog interface
for asynchronous and synchronous cards. It can be placed
between the card and the microcontroller. It performs all
supply, protection and control functions. It is directly
compatible with ISO 7816, GSM11.11 and EMV
specifications.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
Supply
VDDA
IDD
analog supply voltage
supply current
Card supply
VCC(O)
ICC(O)
output voltage
output current
General
fCLK
card clock frequency
Tde
deactivation cycle time
Ptot
continuous total power dissipation
TDA8002AT; TDA8002BT
TDA8002G
Tamb
operating ambient temperature
sleep mode
idle mode; fCLK = 2.5 MHz;
fCLKOUT = 10 MHz; VDD = 5 V
active mode; fCLK = 2.5 MHz;
fCLKOUT = 10 MHz; VDD = 5 V
active mode; fCLK = 2.5 MHz;
fCLKOUT = 10 MHz; VDD = 3 V
DC load <65 mA
VCC short-circuited to GND
Tamb = 25 to +85 °C
Tamb = 25 to +85 °C
MIN. TYP. MAX. UNIT
3.0 5
6.5 V
150 µA
6
mA
9
mA
12 mA
4.75
5.25 V
100 mA
0
12 MHz
60 80 100 µs
25
0.56 W
0.46 W
+85 °C
1997 Nov 04
2
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