7025ERPQS45 View Datasheet(PDF) - MAXWELL TECHNOLOGIES
Part Name
Description
Manufacturer
7025ERPQS45 Datasheet PDF : 20 Pages
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(8K x 16-Bit) Dual Port RAM High-Speed CMOS
7025E
TABLE 6. 7025E AC ELECTRICAL CHARACTERISTICS FOR READ CYCLE
(VCC = 5V ± 10%, VSS = 0V, TA = -55 TO 125 °C)
PARAMETER
SYMBOL
MIN
MAX
UNIT
Address Access Time
-35
-45
Chip Select Access Time 1
-35
-45
Byte Select Access Time 1
-35
-45
Output Select to Output Valid
-35
-45
Output Low Z Time 2,3
-35
-45
Output High Z Time 2,3
-35
-45
Chip Enable to Power Up Time 2
Chip Disable to Power Up Time 2
Semaphore Flag Update Pulse (OE or SEM)
tAA
ns
--
35
--
45
tACS
ns
--
35
--
45
tABE
ns
--
35
--
45
tAOE
ns
--
20
--
25
tLZ
3
3
ns
--
--
tHZ
--
20
ns
--
20
tPU
0
--
ns
tPD
--
50
ns
tSOP
15
--
ns
1. To access RAM, CS = VIL, UB or LB = VIL, SEM = VIH. To access semaphore, CS = VIN and SEM = VIL. Either condition must
be valid for the entire tEW time.
2. Guaranteed by design.
3. Transition is measured ± 500 mV from low or high impedance voltage with load.
TABLE 7. 7025E AC ELECTRICAL CHARACTERISTICS FOR WRITE CYCLE
(VCC = 5V ± 10%, VSS = 0V, TA = -55 TO 125 °C)
PARAMETER
SYMBOL
MIN
MAX
UNIT
Write Cycle Time
-35
-45
tWC
ns
35
--
45
--
Address Valid to End of Write
-35
-45
Chip Select to End of Write 1
-35
-45
tAW
ns
30
--
40
--
tSW
ns
30
--
40
--
1000586
12.19.01 Rev 2
All data sheets are subject to change without notice 4
©2001 Maxwell Technologies
All rights reserved.
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