TA0105A View Datasheet(PDF) - Tripath Technology Inc.
Part Name
Description
Manufacturer
TA0105A
Tripath Technology Inc.
TA0105A Datasheet PDF : 29 Pages
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Tripath Technology, Inc. - Technical Information
Electrical Characteristics (Notes 7 and 8)
TA = 25 °C. Unless otherwise noted, the supply voltage is VPP=|VNN|=148V, the input frequency is
1kHz and the measurement bandwidth is 20kHz. See Application/Test Circuit on page 7.
SYMBOL
PARAMETER
POUT
Output Power
(Continuous Output/Channel)
THD + N
THD + N
THD + N
THD + N
IHF-IM
Total Harmonic Distortion Plus
Noise
Total Harmonic Distortion Plus
Noise
Total Harmonic Distortion Plus
Noise
Total Harmonic Distortion Plus
Noise
IHF Intermodulation Distortion
SNR
Signal-to-Noise Ratio
CS
Channel Separation
η
Power Efficiency
η
Power Efficiency
AV
Amplifier Gain
AVERROR
eNOUT
Channel to Channel Gain Error
Output Noise Voltage
CONDITIONS
VPP=|VNN|=148V
THD+N = 0.1%, RL = 25Ω
THD+N = 1.0%, RL = 25Ω
MIN.
VPP=|VNN|=106V
THD+N = 0.1%, RL = 12.5Ω
THD+N = 1.0%, RL = 12.5Ω
VOUT = 50Vrms, f = 1kHz, RL =
12.5Ω, VPP=|VNN|=106V
VOUT = 50Vrms, f = 7kHz, RL =
12.5Ω, VPP=|VNN|=106V
VOUT = 70.7Vrms, f = 1kHz, RL =
25.0Ω, VPP=|VNN|=148V
VOUT = 70.7Vrms, f = 7kHz, RL =
25.0Ω, VPP=|VNN|=148V
19kHz, 20kHz, 1:1 (IHF), RL = 50Ω
VOUT = 25Vrms/Channel
A Weighted, RL = 25Ω,
POUT = 400W/Channel
0dBr = 100W, RL = 25Ω, f = 1kHz
VOUT = 100Vrms/Channel, RL =
85
50Ω, VPP=|VNN|=148V
VOUT = 70.7Vrms/Channel, RL =
85
25Ω, VPP=|VNN|=106V
POUT = 10W/Channel, RL = 25Ω,
Rin = 34.8kΩ, See Application /
Test Circuit
POUT = 10W/Channel, RL = 25Ω
-1
See Application / Test Circuit
A-Weighted, input shorted, DC
offset nulled to zero
TYP.
300
400
300
400
0.06
0.2
0.06
0.2
0.02
103
100
90
90
40.5
700
MAX. UNITS
W
W
W
W
0.25 %
1.0
%
0.25 %
1.0
%
%
dB
dB
%
%
V/V
1
dB
µV
Note 7: Minimum and maximum limits are guaranteed but may not be 100% tested.
Note 8: Specific Components used:
Output MOSFETs (QO): ST Microelectronics STW20NM50FD
Output Diodes (DO): International Rectifier MUR460
Feedback Resistors (RFB): 39.2Kohm, 1W
Gate Diodes (DG): General Semiconductor SS16
4
TA0105A – RW/ Rev. 2.2/05.05
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