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T1010H View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
T1010H
ST-Microelectronics
STMicroelectronics ST-Microelectronics
T1010H Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Characteristics
T1010H
Figure 3.
On-state rms current versus
ambient temperature (free air
convection, (full cycle)
IT(RMS)(A)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
Ta(°C)
25
50
75
100
125
150
Figure 4. Relative variation of thermal
impedance, versus pulse duration
K=[Zth/Rth]
1.E+00
1.E-01
Zth(j-c)
Zth(j-a)
1.E-02
1.E-03
1.E-03
1.E-02
1.E-01
tp(s)
1.E+00
1.E+01
1.E+02
1.E+03
Figure 5.
Relative variation of gate trigger Figure 6.
current and voltage versus junction
temperature (typical values)
Relative variation of holding and
latching current versus junction
temperature (typical values)
IGT, VGT[Tj] / IGT, VGT[Tj=25 °C]
2.5
IGT Q3
2.0
IGTQ1- Q2
1.5
1.0 VGT Q1 - Q2- Q3
IH, IL [Tj] / IH, IL [Tj=25 °C]
2.0
IH
1.5
IL
1.0
0.5
0.0
-50
-25
0
Tj(°C)
25
50
75
100 125 150
0.5
0.0
-50
-25
0
Tj(°C)
25
50
75
100 125 150
Figure 7.
Surge peak on-state current versus Figure 8.
number of cycles
Non-repetitive surge peak on-state
current and corresponding value
of I2t
ITSM(A)
110
100
90
80
70
60
50
40
30
Repetitive
20
TC=135 °C
10
0
1
Non repetitive
Tj initial=25 °C
Number of cycles
10
100
t=20ms
One cycle
1000
ITSM(A), I²t (A²s)
1000
dI/dt limitation: 50 A/µs
100
10
Sinusoidal pulse width tp < 10 ms
1
0.01
0.10
Tj initial=25 °C
ITSM
I²t
tP(ms)
1.00
10.00
4/10
Doc ID 15715 Rev 1
 

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