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T0930-TJT Просмотр технического описания (PDF) - Atmel Corporation

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T0930-TJT SiGe Power Amplifier for CW Applications Atmel
Atmel Corporation Atmel
T0930-TJT Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Electrical Characteristics for 1 W Application
VCC = VCC1, ... , VCC3, VCC, CTL = +2.4 V, VCTL = 1.7 V, Tamb = +25°C, 50-W input and 50-W external output match
No. Parameters
Test Conditions
Pin Symbol Min. Typ. Max. Unit
1 Power Supply
1.1 Supply voltage
1.2
Current consumption in
active mode
Pout = 30 dBm
PAE = 47%
VCC
1.8
2.4
3.0
V
I
0.9
A
Current consumption
1.3 (leakage current)
in power-down mode
VCTL £ 0.2 V
I
10
µA
2 RF Input
2.1 Frequency range
2.2 Input impedance(1)
2.3 Input power
2.4 Input VSWR(1)
3 RF Output
Pin = 0 to 12 dBm
Pout = 30 dBm
fin
880 900 935 MHz
Zi
50
W
Pin
5
12 dBm
2:1
3.1 Output impedance(1)
3.2
Output power in normal
conditions
3.3 Minimum output power
3.4 Power-added efficiency
3.5 Stability
Pin = 5 dBm
RL = RG = 50 W
VCC = 2.4 V, Tamb = +25°C
VCC = 1.8 V, Tamb = +25°C
VCTL = 0.3 V
VCC = 2.4 V, Pout = 27 dBm
VCC = 2.4 V, Pout = 30 dBm
Temp = -25 to +85°C
no spurious ³ -60 dBc
Zo
Pout
Pout
PAE
PAE
VSWR
50
W
30
dBm
27
dBm
- 20
dBm
40
%
47
%
10:1
3.6
Load mismatch (stable,
no damage)
Pout = 30 dBm, all phases
VSWR
10:1
3.7
Second harmonic
distortion
2fo
-35 dBc
3.8 Third harmonic distortion
3fo
-35 dBc
Noise power
3.9 f = 925 to 935 MHz
f ³ 935 MHz
Pout = 30 dBm
RBW = 100 kHz
-73
-70 dBm
-85
-82 dBm
3.10 Rise and fall time
0.5
ms
3.11
Isolation between input
and output
4 Power Control
Pin = 0 to 10 dBm
VCTL £ 0.2 V (power down)
50
dB
4.1 Control curve
Pout ³ 25 dBm
150 dB/V
4.2 Power control range
VCTL = 0.3 to 2.0 V
50
dB
4.3 Control voltage range
VCTL
0.3
2.0
V
4.4 Control current
Pin = 0 to 10 dBm, VCTL = 0 to 2.0 V
ICTL
200
µA
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. With external matching (see “Application Circuit”).
Type*
A
A
A
A
C
C
C
C
A
A
A
C
C
A
A
C
A
C
C
C
A
A
4 T0930
4722A–SIGE–06/03
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