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T0930-TJQ Просмотр технического описания (PDF) - Atmel Corporation

Номер в каталогеКомпоненты Описаниепроизводитель
T0930-TJQ SiGe Power Amplifier for CW Applications Atmel
Atmel Corporation Atmel
T0930-TJQ Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
T0930
Absolute Maximum Ratings
All voltages refer to GND
Parameters
Symbol
Min.
Max.
Unit
Supply voltage VCC at VCTL = 1.7 V, Pin 5
Pin 1, 2, 3
Pins 11, 12, 13, 14 and 15
Pin 9
VCC1
VCC2
VCC3
VCC, CTL
Input power, Pin 6
Pin
Gain control voltage(1), Pin 8
VCTL
0
Duty cycle for operation
4
4
4
V
4
12
dBm
2
V
100
%
Junction temperature
Tj
+150
°C
Storage temperature
Tstg
-40
+150
°C
Note: 1. The gain control voltage should always be 0.2 V below the supply voltage. RF should be applied before ramp-up.
Operating Range
All voltages referred to GND
Parameters
Symbol
Min.
Typ.
Max.
Unit
Supply voltage VCC(1) 1 W application
VCC1, VCC2, VCC3,
VCC, CTL
1.8
2.4
3
V
Supply voltage VCC(1) 2 W application
VCC1, VCC2, VCC3,
VCC, CTL
2.6
3.2
3.6
V
Ambient temperature
Tamb
-25
+85
°C
Input frequency
fin
900
MHz
Note: 1. The gain control voltage should be always 0.2 V below the supply voltage. RF should be applied before ramp-up.
3
4722A–SIGE–06/03
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