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STD11NM60ND View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STD11NM60ND Datasheet PDF : 19 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
STD/F/I/P/U11NM60ND
2
Electrical characteristics
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1 mA, VGS= 0
600
dv/dt(1) Drain-source voltage slope VDD = 480 V,ID = 10 A,
VGS = 10 V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = max rating,
VDS = max rating,@125 °C
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20 V
VGS(th) Gate threshold voltage
VDS= VGS, ID = 250 µA
3
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 5 A
45
4
0.37
1
100
100
5
0.45
V
V/ns
µA
µA
nA
V
Ω
1. Value measured at turn off under inductive load
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs(1)
Ciss
Coss
Crss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =15 V, ID= 5 A
VDS = 50 V, f =1 MHz,
VGS = 0
-
7.5
-
S
850
pF
-
44
-
pF
5
pF
Coss
(2)
eq.
Equivalent output
capacitance
VGS = 0, VDS = 0V to 480 V -
130
-
pF
Rg Gate input resistance
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
-
3.7
-
Ω
open drain
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 480 V, ID = 10 A
VGS = 10 V
(see Figure 19)
30
nC
-
4
-
nC
16
nC
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Doc ID 14625 Rev 2
5/19
 

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